OVERVIEW

This course, delivered in the first semester of the first year of the Master's Degree programme, provides students with a fundamental understanding of the physical properties of crystalline solids, including metals, insulators, and semiconductors. The course introduces crystal structures, lattice vibrations, electronic states, and the thermal properties of solids, highlighting the relationship between microscopic structure and macroscopic physical behaviour. Particular emphasis is placed on semiconductor physics, which provides the foundation for the advanced courses in electronics and optoelectronics offered in the second semester.

AIMS AND CONTENT

LEARNING OUTCOMES

By exploiting arguments derived from statistical and quantum physics a description of the properties of solids at the microscopic level will be derived. Students will master the concepts of crystal lattice, lattice dynamics, and electronic band structure. The correlations of crystal lattice and bandstructure will be highlighted in order to describe metallic, semiconductor and insulator behavio. Particular emphasis will be placed in describing the electronic bandstructure of semiconductors. Concepts dealing with the dynamical trasport properties in semiconductor including the formation of p-n junctions will be addressed. The students will address the physical basis and working principle of crucial technological devices such as Light emitting Diodes, Lasers and Solar cells.

AIMS AND LEARNING OUTCOMES

At the end of the course, students will be able to:

· explain the microscopic physical properties of crystalline solids using concepts from classical, statistical, and quantum physics;

· describe crystal lattices, lattice vibrations, and electronic band structures;

· distinguish between metallic, insulating, and semiconducting behavior on the basis of electronic structure;

· analyze intrinsic and extrinsic semiconductors, including the role of doping and carrier statistics;

· discuss charge transport phenomena, including drift, diffusion, mobility, and conductivity;

· explain carrier generation and recombination processes and their impact on semiconductor behavior;

· describe the physical principles of p–n junctions and their operation under equilibrium and biased conditions which will prove of fundamental importance in a broad range of opto-electronic devices;

PREREQUISITES

Basic knowledge of calculus, general physics, and modern physics is required for successful course attendance.

TEACHING METHODS

The course consists of approximately 64 hours of lectures, during which theoretical concepts, examples, and applications will be presented. Lectures will be delivered in the classroom, or remotely if in-person teaching is not permitted. The teaching materials (slides) presented during the lectures will be made available to students via the Aulaweb platform.

SYLLABUS/CONTENT

1. Classical electromagnetism: basic distinction between conductors and insulators. The dielectric function in the Lorentz and Drude-Lorentz models. Vibrational and electronic oscillators.

2. Review of statistical physics of solids: specific heat. The Debye model and phonons. The Sommerfeld model and free electrons.

3. Brief review of classical interference concepts. Crystalline order and the Laue formula: the reciprocal lattice. Scattering and diffraction of X-rays, neutrons and electrons. Amorphous solids.

4. Excitations in crystalline solids. Phonon branches. Crystalline structure and electronic bands. Band structure of simple metals, and insulators.

5. Semiconductor crystal structures and electronic bands.

6. Intrinsic and extrinsic semiconductors. Electrons, holes and doping.

7. Charge transport in semiconductors. Drift and diffusion. Effective mass, mobility and conductivity.

8. Nonequilibrium carrier dynamics. Generation, recombination, carrier lifetime and diffusion.

9. The p–n junction. Equilibrium properties, built-in potential and carrier transport. Introduction to opto-electronic devices

RECOMMENDED READING/BIBLIOGRAPHY

Teaching Materials:
Lecture materials and slides will be made available on Aulaweb/TEAMS.

Recommended Textbooks:

• J.R. Hook and H.E. Hall, Solid State Physics, John Wiley & Sons

• S.H. Simon, Oxford Solid State Basics

• S.O. Kasap, Principles of Electronic Materials and Devices, McGraw-Hill

• R.F. Pierret Advanced Semiconductor Fundamentals , Addison Wesley

TEACHERS AND EXAM BOARD

LESSONS

LESSONS START

According to the timetable reported here 

Class schedule

The timetable for this course is available here: Portale EasyAcademy

EXAMS

EXAM DESCRIPTION

The exam will consist of an oral interview lasting approximately 45 minutes. During the interview, topics covered in the course will be discussed, focusing on theoretical knowledge and its application to practical examples. The student may begin the exam by choosing one topic from the syllabus (accounting for about one-quarter of the exam), while the remaining time will be dedicated to exploring the other parts of the program in greater depth.

ASSESSMENT METHODS

During the oral exam, the actual achievement of the expected learning outcomes will be assessed. The level of knowledge acquired on specific topics of the syllabus will be evaluated, as well as the understanding of the role of physical mechanisms that determine the properties of solids. Additionally, the student’s critical thinking skills in addressing specific cases posed by the instructor will be examined. The quality of the presentation, correct use of specialized terminology, and the ability to engage in critical reasoning regarding the specific cases proposed by the instructor will also be assessed.

FURTHER INFORMATION

Notice to students with disabilities or specific learning disorders (SLD):
Students who require exam accomodations must first upload their certification on the University’s online portal at servizionline.unige.it under the “Students” section. The documentation will be reviewed by the University’s Inclusion Services Office for students with disabilities and SLD, as detailed on the affiliated website at:
SCIENZA E TECNOLOGIA DEI MATERIALI 11430 | Students with disabilities and/or SLD | UniGe | University of Genoa | Degree Programs UniGe

Subsequently, at least 10 days before the exam date, students must send an email to the course instructor with whom they will take the exam, copying both the School’s Inclusion Coordinator for students with disabilities and SLD (sergio.didomizio@unige.it) and the Inclusion Services Office mentioned above. The email must specify:

• the course title

• the exam date

• the student’s full name and matriculation number

• the compensatory tools and dispensatory measures requested and deemed necessary

The Inclusion Coordinator will confirm to the instructor that the student is entitled to request exam accommodations and that these accommodations must be agreed upon with the instructor. The instructor will reply confirming whether the requested accommodations can be granted.

Requests must be submitted at least 10 days before the exam date to allow the instructor sufficient time to evaluate them. In particular, if students intend to use concept maps during the exam (which must be significantly more concise than those used for study), late submissions will not allow enough time for necessary adjustments.

For further information regarding the request for services and accommodations, please refer to the document: Guidelines for the request of services, compensatory tools, dispensatory measures, and specific aids.