OVERVIEW

Solid-state electronic devices are the building blocks of modern technology. This module explores the principles that govern semiconductor behavior, guiding students through the quantum- and band-theory foundations essential for device physics. Building on these concepts, it examines how crystal properties translate into device operation by modeling and analyzing diodes, MOSFETs, and BJTs. The module concludes with an introduction to emerging GaN and SiC power technologies, framing future advances in electronic devices.

AIMS AND CONTENT

LEARNING OUTCOMES

The module provides the fundamentals of chemistry and physics to approach solid-state electronic devices. It introduces physical structure, modes of operation and models of devices such as diodes, MOSFETs and BJTs, as well as integrated circuit (IC) fabrication technologies. An overview of power devices based on compound semiconductors such as GaN and SiC will be provided.

AIMS AND LEARNING OUTCOMES

This course aims to equip students with a solid grounding in the chemical and physical principles underlying semiconductor materials and devices. By integrating fundamentals of chemistry and physics (quantum mechanics and solid‐state physics), the course enables students to:

• Grasp how atomic-scale interactions and crystal structure determine semiconductor properties
• Link these material characteristics to the operational behavior of diodes, MOS transistors, and other semiconductor components
• Become familiar with the key fabrication steps and design rules of microelectronic technologies
• Acquire an introductory perspective on both traditional power devices and emerging GaN/SiC‐based solutions

Learning Outcomes

By actively attending lectures and engaging in individual study, students will acquire both the theoretical insight and practical skills needed to analyze, model, and (at a basic level) design electronic systems built around semiconductor devices.

In particular, upon successful completion of the course students will be able to:

1. Understand the Fundamentals of Chemistry
   • Describe basic principles of quantum mechanics as they apply to solid materials
   • Explain chemical bonds and atomic interactions within crystalline solids
2. Understand the Fundamentals of Solid‐State Physics
   • Summarize the band theory in solid‐state physics
   • Differentiate between the electrical properties of semiconductors, conductors, and insulators
   • Analyze electronic carrier transport mechanisms (e.g., carrier drift and diffusion) in solid materials
3. Interpret the Behavior of Semiconductor Devices
   • Apply solid‐state physics concepts to model and predict diode and MOS transistor operation
   • Evaluate device characteristics (I–V curves, threshold voltages, etc.) using simplified semiconductor models
   • Incorporate device models into basic circuit configurations for small‐signal and large‐signal analysis
4. Understand the Basics of Microelectronics Technologies
   • Outline the major fabrication steps of a silicon‐based microelectronic chip
   • Explain design rules for device layouts, with emphasis on MOS transistor geometries
   • Demonstrate a foundational understanding of CMOS circuit layout and the rationale behind mask‐level design choices
5. Gain Basic Knowledge of Power Semiconductor Devices
   • Identify traditional power electronic components (e.g., silicon power diodes, MOSFETs, IGBTs) and their typical applications
   • Contrast conventional silicon‐based power devices with compound semiconductor devices
   • Describe the material advantages and operational features of GaN and SiC power devices, including their benefits for high‐frequency and high‐temperature applications

PREREQUISITES

• Basic mathematical skills
• Basic knowledge of semiconductor devices such as diodes and transistors and their use in simple circuit configurations.

TEACHING METHODS

The module is based on frontal teaching.

SYLLABUS/CONTENT

We will begin by introducing the basic concepts of the structure of matter, with a brief introduction on quantum mechanics. Next, we will explore how devices are fabricated (focus on technologies). Then we will explain in detail how basic semiconductor devices work through the mathematical models that describe their behavior, starting with the theory of energy bands in solids. Next, the course will focus on integrated circuit layout design, guiding students step by step through the necessary processes and technical considerations. Finally, power devices will be covered, providing an overview of these crucial technologies for energy-efficient applications.

The lecture plan is structured as follows:

1. Introduction to quantum mechanics.
2. Crystal structure and Fabrication technologies.
3. Quantum theory of solids.
4. Semiconductors in equilibrium.
5. Transport phenomena.
6. Carriers under non-equilibrium conditions.
7. Pn and metal-semiconductor junctions.
8. MOS transistor.
9. Device layouts for integrated circuits.
10. Hints to power devices in both Silicon and wide band-gap materials.

The lectures deal with topics such as the progress of electronics in the support of Society and Industry. Thus, this teaching contributes to the achievement of the following Targets of the UN SDGs 2030:

8.2 Achieve higher standards of economic productivity through diversification, technological progress and innovation, also with particular attention to high value- added and labour-intensive sectors

9.4 Improve infrastructure and sustainably reconfigure industries by 2030, increasing efficiency in the use of resources and adopting cleaner and more environmentally friendly technologies and industrial processes, ensuring that all states take action respecting their respective capabilities

9.5 Increase scientific research, enhance the technological capabilities of the industrial sector in all states - especially in developing states - as well as encourage innovations and substantially increase, by 2030, the number of employees for every million people, in the research and development sector and expenditure on research – both public and private – and on development.

Furthermore, the specific teaching method, which stimulates active participation and critical thinking of male and female students through open discussions and the use of an inclusive language which facilitates the development of open and sensitive thinking vs needs of others, contribute to the achievement of objectives 4 - QUALITY EDUCATION and 5 - GENDER EQUALITY.

RECOMMENDED READING/BIBLIOGRAPHY

The module material is published on Aulaweb.

1. Lecture notes
2. Books:
   • Richard S. Muller and Theodore I. Kamins, Device Electronics for Integrated Circuits (Third Edition), Wiley International Edition
   • Donald A. Neamen, Semiconductor Physics and Devices: Basic Principles. 4th ed., 2012, McGraw-Hill Companies
   • Lutz, Josef; Schlangenotto, Heinrich; Scheuermann, Uwe; de Doncker, Rik W., Semiconductor power devices : physics, characteristics, reliability, Springer (2011-2018)
   • S.M. Sze, Kwok K. Ng, Physics of Semiconductor Devices, First published:10 April 2006, Print ISBN:9780471143239 |Online ISBN:9780470068328 |DOI:10.1002/0470068329

TEACHERS AND EXAM BOARD

LESSONS

Class schedule

The timetable for this course is available here: Portale EasyAcademy

EXAMS

EXAM DESCRIPTION

The final grade will be determined by the outcomes of a written exam, including open questions, multiple choice tests and exercises, and be possibly integrated with an oral exam (optional, it can be requested by the student to improve the grade of the written exam). It's important to note that opting for the oral exam also carries the potential risk of lowering the grade from the written exam.

The opportunity to take the oral exam to improve the written exam grade is limited to a maximum of two attempts.

A minimum period of one month must elapse between the first and second oral exams.

To evaluate the student’s ability to interpret and design the physical layout of a CMOS circuit, with a focus on understanding design rules and layout verification processes, an optional laboratory test will be proposed to the candidates i.e. the design of the layout of a simple analog circuit using a given CMOS technology. The schematic design of the circuit is not part of this assignment This task is preparatory and does not require full circuit-level design, which will be addressed in subsequent coursework.

Students with valid certifications for Specific Learning Disorders (SLDs), disabilities or other educational needs are invited to contact the teacher and the School's contact person for disability at the beginning of teaching to agree on possible teaching arrangements that, while respecting the teaching objectives, take into account individual learning patterns. Contacts of the School's disability contact person can be found at the following link Comitato di Ateneo per l’inclusione delle studentesse e degli studenti con disabilità o con DSA | UniGe | Università di Genova

ASSESSMENT METHODS

The written/oral tests check the knowledge of the students of the module content.

The assessment of competences is certified in a progressive fashion:

• a group of baseline questions aims to verify the minimal contents required to pass the exam (18-22)
• a group of reference tests aims to validate the expected average of competence and notions (23-28)
• a group of challenging questions highlights the acquisition of original and high-level skills (29-30L)

The optional lab test on the design of the layout of a simple analog circuit using a given CMOS technology can award up to 3 points.