AIMS AND LEARNING OUTCOMES

The student will achieve a deep comprehension of the working principles of most common electronic devices, in terms of band structures of semiconductors and heterostructures and transport equations, analysing carrier type and properties. She/he will examine and evaluate physical limitations to a further optimization of device properties as well as technological bottlenecks. She/he will be able to critically evaluate pros and cons of new materials and technologies proposed to continue along the Moore law (More Moore and More than Moore).

TEACHING METHODS

Theoretical lectures (48h)

SYLLABUS/CONTENT

Semiconductors: band structures, electronic properties and transport.

Junctions: Growth and device fabrication – P-n junction and Schottky junction - Band bending at the interface and electronic states – diffusion, generation and recombination – transport – two dimensional electron gases.

Electronic and optoelectronic devices: Diodes – Bipolar Junction Transistors (BJT) – Field effect Transistors (JFET e MOSFET) - CMOS- LED – photodiodes and phototransistors– Photovoltaic cells (hints) - Laser – Quantum cascade lasers.

Developments of electronics and optoelectronics: 2D materials (graphene, Xenes,) – Spintronics

RECOMMENDED READING/BIBLIOGRAPHY

Lecture notes will be available on aulaweb immediately after each Lecture.

Recommended books

Kittel   “Introduction to solid state physics”

Brennan  “ The physics of semiconductors”

Sze  “ Physics of semiconductor devices ”

Pulfrey and Tarr   “Introduction to microelectronic devices”

Streetman-Banerjee  “Solid state electronic devices”